A REVIEW OF N TYPE GE

≤ 0.15) is epitaxially grown on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which you can the framework is cycled via oxidizing and annealing phases. As a result of preferential oxidation of Si about Ge [68], the original Si1–Period A horizontal row inside the periodic desk. The atomic quantity of Each and ev